CVD Graphene on Silicon Substrate

CVD graphene film on a silicon substrate with flint oxide

bio supercapacitors catalysts solar panels graphene film coatings


Graphene film obtained by CVD method (chemical vapor deposition: a mixture of methane, hydrogen and argon) on a silicon substrate / layer of silicon oxide (Si / SiO2) with a thickness of 285 nm or 90 nm.

Grain size:> 20 microns
Transparency:> 97%
Coverage Area:> 99%
Thickness: <1 nm – one layer
Surface resistance: 500 – 800 Ohm / □
Mobility of charge carriers on SiO2: 1500 – 2500 cm2 / V ∙ s